A REVIEW OF N TYPE GE

A Review Of N type Ge

s is the fact that of the substrate content. The lattice mismatch leads to a considerable buildup of strain Strength in Ge levels epitaxially grown on Si. This strain Electrical power is largely relieved by two mechanisms: (i) technology of lattice dislocations with the interface (misfit dislocations) and (ii) elastic deformation of both the substr

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